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| SEMiX603GB066HDs Absolute Maximum Ratings Symbol IGBT VCES IC ICnom ICRM ICRM = 2xICnom VCC = 360 V VGE 15 V VCES 600 V VGES tpsc Tj Inverse diode IF Tc = 25 C Tc = 80 C Tj = 150 C Tj = 175 C Tc = 25 C Tc = 80 C 600 720 541 600 1200 -20 ... 20 6 -40 ... 175 771 562 600 IFRM = 2xIFnom tp = 10 ms, sin 180, Tj = 25 C 1200 1800 -40 ... 175 600 -40 ... 125 AC sinus 50Hz, t = 1 min 4000 V A A A A V s C A A A A A C A C V Conditions Values Unit SEMiX(R) 3s Trench IGBT Modules SEMiX603GB066HDs Tj = 175 C IFnom Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 IFRM IFSM Tj Module It(RMS) Tstg Visol Typical Applications* * Matrix Converter * Resonant Inverter * Current Source Inverter Characteristics Symbol IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies Coes Cres QG RGint td(on) tr Eon td(off) tf Eoff Rth(j-c) per IGBT IC = 600 A VGE = 15 V chiplevel Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C VGE = 15 V Tj = 25 C Tj = 150 C 5 Tj = 25 C Tj = 150 C f = 1 MHz f = 1 MHz f = 1 MHz 37.0 2.31 1.10 4800 0.67 Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C Tj = 150 C 150 145 12 1050 105 43 0.087 1.45 1.7 0.9 0.85 0.9 1.4 5.8 0.15 1.85 2.1 1 0.9 1.4 2.0 6.5 0.45 V V V V m m V mA mA nF nF nF nC ns ns mJ ns ns mJ K/W Conditions min. typ. max. Unit Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance VGE=VCE, IC = 9.6 mA VGE = 0 V VCE = 600 V VCE = 25 V VGE = 0 V VGE = - 8 V...+ 15 V Tj = 25 C VCC = 300 V IC = 600 A RG on = 3 RG off = 3 GB (c) by SEMIKRON Rev. 13 - 16.12.2009 1 SEMiX603GB066HDs Characteristics Symbol Conditions Tj = 25 C Tj = 150 C Tj = 25 C Tj = 150 C rF Tj = 25 C Tj = 150 C IF = 600 A Tj = 150 C di/dtoff = 3800 A/s T = 150 C j VGE = -8 V Tj = 150 C VCC = 300 V per diode 0.9 0.75 0.5 0.8 min. typ. 1.4 1.4 1 0.85 0.7 0.9 350 63 13 max. 1.60 1.6 1.1 0.95 0.8 1.1 Unit V V V V m m A C mJ Inverse diode VF = VEC IF = 600 A VGE = 0 V chip VF0 SEMiX(R) 3s Trench IGBT Modules SEMiX603GB066HDs IRRM Qrr Err Rth(j-c) Module LCE RCC'+EE' 0.11 20 K/W nH m m K/W res., terminal-chip per module to heat sink (M5) TC = 25 C TC = 125 C 3 to terminals (M6) 2.5 0.7 1 0.04 5 5 300 Features * Homogeneous Si * Trench = Trenchgate technology * VCE(sat) with positive temperature coefficient * UL recognised file no. E63532 Rth(c-s) Ms Mt w Nm Nm Nm g K Typical Applications* * Matrix Converter * Resonant Inverter * Current Source Inverter Temperatur Sensor R100 B100/125 Tc=100C (R25=5 k) R(T)=R100exp[B100/125(1/T-1/T100)]; T[K]; 493 5% 3550 2% Remarks * Case temperature limited to TC=125C max. * Product reliability results are valid for Tj=150C * For short circuit: Soft RGoff recommended * Take care of over-voltage caused by stray inductance GB 2 Rev. 13 - 16.12.2009 (c) by SEMIKRON SEMiX603GB066HDs Fig. 1: Typ. output characteristic, inclusive RCC'+ EE' Fig. 2: Rated current vs. temperature IC = f (TC) Fig. 3: Typ. turn-on /-off energy = f (IC) Fig. 4: Typ. turn-on /-off energy = f (RG) Fig. 5: Typ. transfer characteristic Fig. 6: Typ. gate charge characteristic (c) by SEMIKRON Rev. 13 - 16.12.2009 3 SEMiX603GB066HDs Fig. 7: Typ. switching times vs. IC Fig. 8: Typ. switching times vs. gate resistor RG Fig. 9: Typ. transient thermal impedance Fig. 10: Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11: Typ. CAL diode peak reverse recovery current Fig. 12: Typ. CAL diode recovery charge 4 Rev. 13 - 16.12.2009 (c) by SEMIKRON SEMiX603GB066HDs SEMiX 3s spring configuration (c) by SEMIKRON Rev. 13 - 16.12.2009 5 SEMiX603GB066HDs This technical information specifies semiconductor devices. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 6 Rev. 13 - 16.12.2009 (c) by SEMIKRON |
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